Please use this identifier to cite or link to this item: http://ir.futminna.edu.ng:8080/jspui/handle/123456789/13599
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dc.contributor.authorMohammed A. Saddiq-
dc.contributor.authorSmirnov, A.-
dc.contributor.authorHubarevich, A.-
dc.contributor.authorStsiapanau, A.-
dc.contributor.authorMukha, Y.-
dc.contributor.authorGarcia Castello, J.-
dc.contributor.authorGarcia-Ruperez, J.-
dc.date.accessioned2021-08-17T01:32:16Z-
dc.date.available2021-08-17T01:32:16Z-
dc.date.issued2014-03-
dc.identifier.citationAbubakar Saddiq Mohammeden_US
dc.identifier.uriwww.the-psst.com.-
dc.identifier.urihttp://repository.futminna.edu.ng:8080/jspui/handle/123456789/13599-
dc.description.abstractTo fabricate a “lab-on-Si chip” biosensing platform we propose to use a nanoporous silicon (npSi) based light emitting element. High current densities and high concentrations of hydrofluoric acid are generally needed during the electrochemical etching process to fabricate high porosity nanostructured silicon films. However, short process time (non-controllability/uniformity of ultrathin films formation), and toxic (high HF vapor pressure), fluidity and aggressive reagents (etching Al layers and interconnections in the meanwhile) are serious concerns associated with it. Therefore, it is highly demanded to seek alternatives to fabricate ultrathin nanoporous Si films using lower current densities at low Fion concentrations. We have developed an ultrathin nanoporous silicon fabrication process by electrochemical etching in ammonia fluoride solution. It was shown that highly uniform and ultrathin high porosity nanoporous silicon films can be fabricated under very low current densities and fluorine ion concentration in a reproducible manner. Structural and electro optical properties of nanoporous silicon films are also discussed.en_US
dc.description.sponsorshipMinistry of Science and Innovation, Spain,; Valencia University, Madrid Autonomous University; Nano-Scale Research Letters; EM-Silicon Nano-Technologies; INNOVA Scientific; BIO-LOGIC Science Instruments; SESYSO Semiconductors Systems; pSiMedia Ltd UK.en_US
dc.language.isoenen_US
dc.publisherGraficas Cervantes, C. B. - NIF - E54074687en_US
dc.relation.ispartofseriesPSST 2014;05-O-17-
dc.subjectNanoporous Silicon Filmsen_US
dc.subjectLab-on-Si-Chipen_US
dc.subjectLight Emitting Elementen_US
dc.subjectUltrathin Filmsen_US
dc.subjectElectrochemical Etchingen_US
dc.titleControllable Ultrathin Nanoporous Silicon Film’s Fabrication Process For A “LAB-ON-SI CHIP” Biosensing Platformen_US
dc.title.alternativePorous Semiconductors – Science and Technology; PSST-2014; Materials of the 9th International Conference. Alicante-Benidorm, Spain.en_US
dc.typeArticleen_US
Appears in Collections:Telecommunication Engineering

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