Please use this identifier to cite or link to this item: http://ir.futminna.edu.ng:8080/jspui/handle/123456789/27682
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dc.contributor.authorYahaya, T.-
dc.contributor.authorMohammed, K. I.-
dc.contributor.authorAbubakar, A. A.-
dc.contributor.authorIsah, K. U.-
dc.date.accessioned2024-04-30T11:28:30Z-
dc.date.available2024-04-30T11:28:30Z-
dc.date.issued2022-
dc.identifier.urihttp://repository.futminna.edu.ng:8080/jspui/handle/123456789/27682-
dc.description.abstractCu2ZnSnS4, copper, zinc, tin, sulphide (CZTS) is a p-type semiconductor with high absorption coefficient and a low cost promising absorber material, having a direct band gap from 1 to 1.5 eV, which is ideal for making absorber layer for solar cell. Owing to the cost effective noble metal, less abundance and industrial large scale application purpose, an effective replacement of indium and gallium in CulnxGa1-S(Se)2 (CIGS) is highly demanded. There are several approaches to improving the performance of as solar cell by enhancing the power conversion efficiency with a less costly and facile device. In this work we present a brief review on different synthesis methods and characterisation of CZTS material. It is therefore, essential for engineering of CZTS material and the optimisation of the fabrication method for the improvement of solar cell.en_US
dc.publisherSchool of Physical Sciences Biennial International Conferenceen_US
dc.subjectCu2ZnSnS4en_US
dc.subjectOptimisationen_US
dc.subjectFabricationen_US
dc.titleA review on CZTS (Cu2ZnSnS4) synthesis methods and characterizationen_US
dc.typePresentationen_US
Appears in Collections:Physics

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